@inproceedings{faf86eda144f4f5682dfc85d6be5b9a0,
title = "A-Si/c-Si1-xGex/c-Si heterojunction solar cells",
abstract = "The performance and material quality requirements of thin film a-Si/c-Si1-xGex/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si 1-xGex thickness, Si1-xGex lifetime and a-Si/c-Si1-xGex interfacial quality have been studied. The simulations predict that Si1-xGex based thin film solar cells provide a significant increase in solar cell output current for Ge fractions larger than 30%, due to the narrower band-gap and increased absorption. In addition, the efficiency of thin (2μm) Si1-xGe x solar cells surpasses that of Si for minority carrier lifetimes larger than 0.5μs. For these 2μm thin layers, simulations predict reduced material quality requirements for Si1-xGex cells, with a clear performance advantage relative to Si based solar cells.",
keywords = "Efficiency, Heterojunction, Lifetime, SiGe, Solar, thin film",
author = "Hadi, {Sabina Abdul} and Ammar Nayfeh and Pouya Hashemi and Judy Hoyt",
year = "2011",
doi = "10.1109/SISPAD.2011.6035083",
language = "British English",
isbn = "9781612844169",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
pages = "191--194",
booktitle = "2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011",
note = "2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 ; Conference date: 08-09-2011 Through 10-09-2011",
}