A SDR Transmitter Baseband-to-IF IC with Digital Out-phasing Exponential Modulation in a 65nm CMOS LPE

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Abstract

A digital pulsed modulation for high efficiency and linearity, switched-mode power amplifier (PA) is proposed. Based on a new representation of digital modulated signals at IF called Out-phasing Digital Exponential Modulation (ODEM), the paper presents the concept, simulations and measurements of an integrated solution in CMOS (baseband and IF) and GaN (PA) technologies. It exhibits a faster decaying spectrum, when compared to Out-phasing pulse-width modulation (OPWM), and a power spectrum that fulfills the spectral emission mask for 64QAM LTE standards. The implementation in a 65 nm CMOS LPE process from GF based on the baseband solution, shows that the SEM requirements for LTE standards are fulfilled. The circuit implementation of the baseband IC is presented is based on digital CMOS circuits.

Original languageBritish English
Title of host publication2023 International Conference on Microelectronics, ICM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages70-73
Number of pages4
ISBN (Electronic)9798350380828
DOIs
StatePublished - 2023
Event2023 International Conference on Microelectronics, ICM 2023 - Abu Dhabi, United Arab Emirates
Duration: 17 Nov 202320 Nov 2023

Publication series

NameProceedings of the International Conference on Microelectronics, ICM

Conference

Conference2023 International Conference on Microelectronics, ICM 2023
Country/TerritoryUnited Arab Emirates
CityAbu Dhabi
Period17/11/2320/11/23

Keywords

  • Digital out-phasing
  • high efficiency
  • high linearity
  • pulsed modulation
  • switched-mode power amplifiers

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