@inproceedings{c9b67ab5a31f4e539b1d96a74c2350ff,
title = "A multiband RF MEMS switch with low insertion loss and CMOS-compatible pull-in voltage",
abstract = "In this paper, we present a novel design of a shunt capacitive, multiband, micro-machined RF switch. The concept of float metal is utilized to reduce the overlap area and therefore the capacitance in the upstate of the device. A full electromechanical model that accounts for residual stress effects is developed to predict the losses, performance, and pull-in voltage of the RF MEMS switch. The new design shows an insertion loss of 0.08 dB, an isolation loss of 85 dB up to 25 GHz, and a pull-in voltage of 3.5V. The low pull-in voltage makes this switch suitable for integration with RF CMOS transceivers. A seamless RF MEMS modelling and verification methodology using state-of-the-art finite-element-method (FEM) tools is developed and used to analyze the switch in both the electromechanical and RF domains.",
author = "Alabi Bojesomo and Numan Saeed and Elfadel, {Ibrahim Abe M.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 20th Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2018 ; Conference date: 22-05-2018 Through 25-05-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/DTIP.2018.8394202",
language = "British English",
series = "Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
editor = "Romolo Marcelli and Yoshio Mita and Stewart Smith and Francis Pressecq and Pascal Nouet and Frederick Mailly and Peter Schneider",
booktitle = "Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2018",
address = "United States",
}