A multiband RF MEMS switch with low insertion loss and CMOS-compatible pull-in voltage

Alabi Bojesomo, Numan Saeed, Ibrahim Abe M. Elfadel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this paper, we present a novel design of a shunt capacitive, multiband, micro-machined RF switch. The concept of float metal is utilized to reduce the overlap area and therefore the capacitance in the upstate of the device. A full electromechanical model that accounts for residual stress effects is developed to predict the losses, performance, and pull-in voltage of the RF MEMS switch. The new design shows an insertion loss of 0.08 dB, an isolation loss of 85 dB up to 25 GHz, and a pull-in voltage of 3.5V. The low pull-in voltage makes this switch suitable for integration with RF CMOS transceivers. A seamless RF MEMS modelling and verification methodology using state-of-the-art finite-element-method (FEM) tools is developed and used to analyze the switch in both the electromechanical and RF domains.

Original languageBritish English
Title of host publicationSymposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2018
EditorsRomolo Marcelli, Yoshio Mita, Stewart Smith, Francis Pressecq, Pascal Nouet, Frederick Mailly, Peter Schneider
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538661994
DOIs
StatePublished - 22 Jun 2018
Event20th Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2018 - Roma, Italy
Duration: 22 May 201825 May 2018

Publication series

NameSymposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2018

Conference

Conference20th Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2018
Country/TerritoryItaly
CityRoma
Period22/05/1825/05/18

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