A millimeter-wave power amplifier with 25dB power gain and +8dBm saturated output power

Yanyu Jin, Eduardo Alarcon Rivero, Mihai A.T. Sanduleanu, John R. Long

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations

Abstract

A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25dB at 52GHz and 10dB at 60GHz with a -3dB bandwidth of 46-53GHz. Saturated output power is +8dBm with a PAE of 7%. The -1dB compression point is 5dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180×960μm2 die consumes a total of 73mA from a 1.5V (±10%) power supply.

Original languageBritish English
Title of host publicationESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
Pages276-279
Number of pages4
DOIs
StatePublished - 2007
EventESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Germany
Duration: 11 Sep 200713 Sep 2007

Publication series

NameESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Conference

ConferenceESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Country/TerritoryGermany
CityMunich
Period11/09/0713/09/07

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