A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications

Haider Abbas, Yawar Abbas, Son Ngoc Truong, Kyeong Sik Min, Mi Ra Park, Jongweon Cho, Tae Sik Yoon, Chi Jung Kang

    Research output: Contribution to journalArticlepeer-review

    40 Scopus citations

    Abstract

    In this work 3 × 3 crossbar arrays of titanium oxide were fabricated and tested for non-volatile memory applications and neuromorphic pattern recognition. The non-volatile memory characteristics of the memristor were examined using retention tests for each memristor. In order to test neuromorphic pattern recognition, the memristor crossbar array was programmed to store '111', '100' and '010' at the first, second and third columns of the array, where '0' and '1' represent the high-resistance state (HRS) and low-resistance state (LRS), respectively. The three similar input patterns of '111', '100' and '010' were applied to the crossbar array, for pattern recognition. Using a twin memristor crossbar array mechanism all three input patterns were recognized.

    Original languageBritish English
    Article number065014
    JournalSemiconductor Science and Technology
    Volume32
    Issue number6
    DOIs
    StatePublished - 22 May 2017

    Keywords

    • crossbar array
    • memristor
    • neuromorphic pattern recognition
    • RRAM
    • titanium oxide

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