A leakage current model for SOI based floating body memory that includes the poole-frenkel effect

Ammar Nayfeh; Viktor Koldyaev; Patrice Beaud; Mikhail Nagoga; Serguei Okhonin

doi:10.1109/SOI.2008.4656301

A leakage current model for SOI based floating body memory that includes the poole-frenkel effect

Ammar Nayfeh
, Viktor Koldyaev
, Patrice Beaud
, Mikhail Nagoga
, Serguei Okhonin

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (D_it) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both D_it and electric field. It can also be extended to SOI based low power devices.

Original language	British English
Title of host publication	2008 IEEE International SOI Conference Proceedings
Pages	75-76
Number of pages	2
DOIs	https://doi.org/10.1109/SOI.2008.4656301
State	Published - 2008
Event	2008 IEEE International SOI Conference - New Paltz, NY, United States Duration: 6 Oct 2008 → 9 Oct 2008

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2008 IEEE International SOI Conference
Country/Territory	United States
City	New Paltz, NY
Period	6/10/08 → 9/10/08

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10.1109/SOI.2008.4656301

Cite this

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title = "A leakage current model for SOI based floating body memory that includes the poole-frenkel effect",

abstract = "The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (Dit) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both Dit and electric field. It can also be extended to SOI based low power devices.",

author = "Ammar Nayfeh and Viktor Koldyaev and Patrice Beaud and Mikhail Nagoga and Serguei Okhonin",

year = "2008",

doi = "10.1109/SOI.2008.4656301",

language = "British English",

isbn = "9781424419548",

series = "Proceedings - IEEE International SOI Conference",

pages = "75--76",

booktitle = "2008 IEEE International SOI Conference Proceedings",

note = "2008 IEEE International SOI Conference ; Conference date: 06-10-2008 Through 09-10-2008",

}

Nayfeh, A, Koldyaev, V, Beaud, P, Nagoga, M & Okhonin, S 2008, A leakage current model for SOI based floating body memory that includes the poole-frenkel effect. in 2008 IEEE International SOI Conference Proceedings., 4656301, Proceedings - IEEE International SOI Conference, pp. 75-76, 2008 IEEE International SOI Conference, New Paltz, NY, United States, 6/10/08. https://doi.org/10.1109/SOI.2008.4656301

A leakage current model for SOI based floating body memory that includes the poole-frenkel effect. / Nayfeh, Ammar; Koldyaev, Viktor; Beaud, Patrice et al.
2008 IEEE International SOI Conference Proceedings. 2008. p. 75-76 4656301 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Nayfeh, Ammar

AU - Koldyaev, Viktor

AU - Beaud, Patrice

AU - Nagoga, Mikhail

AU - Okhonin, Serguei

PY - 2008

Y1 - 2008

N2 - The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (Dit) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both Dit and electric field. It can also be extended to SOI based low power devices.

AB - The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (Dit) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both Dit and electric field. It can also be extended to SOI based low power devices.

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U2 - 10.1109/SOI.2008.4656301

DO - 10.1109/SOI.2008.4656301

M3 - Conference contribution

AN - SCOPUS:57749189374

SN - 9781424419548

T3 - Proceedings - IEEE International SOI Conference

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BT - 2008 IEEE International SOI Conference Proceedings

T2 - 2008 IEEE International SOI Conference

Y2 - 6 October 2008 through 9 October 2008

ER -

A leakage current model for SOI based floating body memory that includes the poole-frenkel effect

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