A leakage current model for SOI based floating body memory that includes the poole-frenkel effect

Ammar Nayfeh, Viktor Koldyaev, Patrice Beaud, Mikhail Nagoga, Serguei Okhonin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes into account oxide/SOI interface traps (Dit) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both Dit and electric field. It can also be extended to SOI based low power devices.

Original languageBritish English
Title of host publication2008 IEEE International SOI Conference Proceedings
Pages75-76
Number of pages2
DOIs
StatePublished - 2008
Event2008 IEEE International SOI Conference - New Paltz, NY, United States
Duration: 6 Oct 20089 Oct 2008

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference2008 IEEE International SOI Conference
Country/TerritoryUnited States
CityNew Paltz, NY
Period6/10/089/10/08

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