@inproceedings{92ed8e98e0324e4c867d98cce45f0009,
title = "A high throughput approach to measuring carrier mobility and lifetime of thin film semiconductors",
abstract = "A new technique has been developed to measure the carrier mobility and lifetime based on current transients produced by a sub-picosecond laser pulse. The theoretical model we proposed agrees well with the experimental data. This technique has been applied to the material libraries fabricated by the combinatorial growth technique.",
keywords = "High through-put system, Mobility and lifetime, semiconductor",
author = "Mao, {S. S.} and Ma, {Z. X.} and Oehlerking, {L. J.} and Chen, {Z. Y.} and Yu, {P. Y.}",
year = "2011",
doi = "10.1063/1.3666743",
language = "British English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "1061--1062",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}