A density functional theory study of ferromagnetism in GaN:Gd

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Abstract

First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have shown that the ferromagnetic p-d coupling is over two orders of magnitude larger than the s-d exchange coupling. The experimental room temperature ferromagnetism in GaN:Gd are explained by the interaction of Gd 4f spins via p-d coupling involving localized holes introduced by intrinsic defects such as Ga vacancies.

Original languageBritish English
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages421-422
Number of pages2
DOIs
StatePublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period27/07/081/08/08

Keywords

  • Density-functional theory
  • Ferromagnetism
  • GaN
  • Gd
  • Vacancies

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