A comprehensive investigation on the short circuit performance of MW-level IGBT power modules

Rui Wu, Paula Diaz Reigosa, Francesco Iannuzzo, Huai Wang, Frede Blaabjerg

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    8 Scopus citations

    Abstract

    This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under short circuit conditions. Further Spice simulations reveal that the stray parameters inside the module play an important role in contributing to such a phenomenon.

    Original languageBritish English
    Title of host publication2015 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9789075815221
    DOIs
    StatePublished - 27 Oct 2015
    Event17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Geneva, Switzerland
    Duration: 8 Sep 201510 Sep 2015

    Publication series

    Name2015 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015

    Conference

    Conference17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
    Country/TerritorySwitzerland
    CityGeneva
    Period8/09/1510/09/15

    Keywords

    • Current Distribution
    • Insulated-Gate Bipolar Transistor (IGBT)
    • Power Modules
    • Short Circuit

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