A complete physical germanium-on-silicon quantum dot self-Assembly process

Amro Alkhatib, Ammar Nayfeh

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Achieving quantum dot self-Assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to predefine nucleation sites is described. Self-Assembly of ordered ,10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications.

Original languageBritish English
Article number2099
JournalScientific Reports
Volume3
DOIs
StatePublished - 28 Jun 2013

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