A 120GHz Receiver with 1/f Noise Mitigation Technique for Near-Field IoT

Ademola A. Mustapha; Mihai Sanduleanu

doi:10.1109/ISCAS46773.2023.10181670

A 120GHz Receiver with 1/f Noise Mitigation Technique for Near-Field IoT

Electrical Engineering

System-on-Chip Lab

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents a 120 GHz receiver for Near-Field IoT sensors, without the conventional LNA and mixers building blocks. A new technique for the reduction of the low-frequency 1/f noise is also presented. The technique is used to improve the sensitivity of the 120GHz receiver with a data rate of 100kb/s, by lowering the 1/f noise corner frequency. The technique involves the complementary switching of two MOSFET transistors in order to effectively act as a single MOSFET transistor. It also involves the isolation of the drain terminals of these identical MOSFET transistors in order to eliminate any electric field from the complementary transistors which may affect the de-trapping process. The complementary switching in the literature has only been applied to low-frequency circuits with the highest operating frequency being 120 kHz. The proposed technique leads to a 9dB reduction in the drain current noise at frequencies up to 100 kHz. Realized in a 65nm CMOS LPE technology from GlobalFoundries™, the receiver has a measured sensitivity of -46dBm, power consumption of 52μW, and energy efficiency of 5.2pJ/bit. The occupied on-chip area is 0.56mm2.

Original language	British English
Title of host publication	ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665451093
DOIs	https://doi.org/10.1109/ISCAS46773.2023.10181670
State	Published - 2023
Event	56th IEEE International Symposium on Circuits and Systems, ISCAS 2023 - Monterey, United States Duration: 21 May 2023 → 25 May 2023

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	2023-May
ISSN (Print)	0271-4310

Conference

Conference	56th IEEE International Symposium on Circuits and Systems, ISCAS 2023
Country/Territory	United States
City	Monterey
Period	21/05/23 → 25/05/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

1/f noise reduction
flicker noise
low power
mm-wave
near-field IoT
OOK detection
receiver
switched bias technique
WSN

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10.1109/ISCAS46773.2023.10181670

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Mustapha, A. A., & Sanduleanu, M. (2023). A 120GHz Receiver with 1/f Noise Mitigation Technique for Near-Field IoT. In ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2023-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS46773.2023.10181670

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abstract = "This paper presents a 120 GHz receiver for Near-Field IoT sensors, without the conventional LNA and mixers building blocks. A new technique for the reduction of the low-frequency 1/f noise is also presented. The technique is used to improve the sensitivity of the 120GHz receiver with a data rate of 100kb/s, by lowering the 1/f noise corner frequency. The technique involves the complementary switching of two MOSFET transistors in order to effectively act as a single MOSFET transistor. It also involves the isolation of the drain terminals of these identical MOSFET transistors in order to eliminate any electric field from the complementary transistors which may affect the de-trapping process. The complementary switching in the literature has only been applied to low-frequency circuits with the highest operating frequency being 120 kHz. The proposed technique leads to a 9dB reduction in the drain current noise at frequencies up to 100 kHz. Realized in a 65nm CMOS LPE technology from GlobalFoundries{\texttrademark}, the receiver has a measured sensitivity of -46dBm, power consumption of 52μW, and energy efficiency of 5.2pJ/bit. The occupied on-chip area is 0.56mm2.",

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author = "Mustapha, \{Ademola A.\} and Mihai Sanduleanu",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 56th IEEE International Symposium on Circuits and Systems, ISCAS 2023 ; Conference date: 21-05-2023 Through 25-05-2023",

year = "2023",

doi = "10.1109/ISCAS46773.2023.10181670",

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Mustapha, AA & Sanduleanu, M 2023, A 120GHz Receiver with 1/f Noise Mitigation Technique for Near-Field IoT. in ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings. Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2023-May, Institute of Electrical and Electronics Engineers Inc., 56th IEEE International Symposium on Circuits and Systems, ISCAS 2023, Monterey, United States, 21/05/23. https://doi.org/10.1109/ISCAS46773.2023.10181670

A 120GHz Receiver with 1/f Noise Mitigation Technique for Near-Field IoT. / Mustapha, Ademola A.; Sanduleanu, Mihai.
ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings - IEEE International Symposium on Circuits and Systems; Vol. 2023-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Mustapha, Ademola A.

AU - Sanduleanu, Mihai

PY - 2023

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N2 - This paper presents a 120 GHz receiver for Near-Field IoT sensors, without the conventional LNA and mixers building blocks. A new technique for the reduction of the low-frequency 1/f noise is also presented. The technique is used to improve the sensitivity of the 120GHz receiver with a data rate of 100kb/s, by lowering the 1/f noise corner frequency. The technique involves the complementary switching of two MOSFET transistors in order to effectively act as a single MOSFET transistor. It also involves the isolation of the drain terminals of these identical MOSFET transistors in order to eliminate any electric field from the complementary transistors which may affect the de-trapping process. The complementary switching in the literature has only been applied to low-frequency circuits with the highest operating frequency being 120 kHz. The proposed technique leads to a 9dB reduction in the drain current noise at frequencies up to 100 kHz. Realized in a 65nm CMOS LPE technology from GlobalFoundries™, the receiver has a measured sensitivity of -46dBm, power consumption of 52μW, and energy efficiency of 5.2pJ/bit. The occupied on-chip area is 0.56mm2.

AB - This paper presents a 120 GHz receiver for Near-Field IoT sensors, without the conventional LNA and mixers building blocks. A new technique for the reduction of the low-frequency 1/f noise is also presented. The technique is used to improve the sensitivity of the 120GHz receiver with a data rate of 100kb/s, by lowering the 1/f noise corner frequency. The technique involves the complementary switching of two MOSFET transistors in order to effectively act as a single MOSFET transistor. It also involves the isolation of the drain terminals of these identical MOSFET transistors in order to eliminate any electric field from the complementary transistors which may affect the de-trapping process. The complementary switching in the literature has only been applied to low-frequency circuits with the highest operating frequency being 120 kHz. The proposed technique leads to a 9dB reduction in the drain current noise at frequencies up to 100 kHz. Realized in a 65nm CMOS LPE technology from GlobalFoundries™, the receiver has a measured sensitivity of -46dBm, power consumption of 52μW, and energy efficiency of 5.2pJ/bit. The occupied on-chip area is 0.56mm2.

KW - 1/f noise reduction

KW - flicker noise

KW - low power

KW - mm-wave

KW - near-field IoT

KW - OOK detection

KW - receiver

KW - switched bias technique

KW - WSN

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M3 - Conference contribution

AN - SCOPUS:85167728488

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

BT - ISCAS 2023 - 56th IEEE International Symposium on Circuits and Systems, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 56th IEEE International Symposium on Circuits and Systems, ISCAS 2023

Y2 - 21 May 2023 through 25 May 2023

ER -

A 120GHz Receiver with 1/f Noise Mitigation Technique for Near-Field IoT

Abstract

Publication series

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UN SDGs

Keywords

Access to Document

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