A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

Maja Vidojkovic; Mihai Sanduleanu; Johan Van Der Tang; Peter Baltus; Arthur Van Roermund

doi:10.1109/RFIC.2007.380831

A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

Maja Vidojkovic, Mihai Sanduleanu, Johan Van Der Tang, Peter Baltus, Arthur Van Roermund

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

Original language	British English
Title of host publication	Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Pages	53-56
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2007.380831
State	Published - 2007
Event	2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 - Honolulu, HI, United States Duration: 3 Jun 2007 → 5 Jun 2007

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)	1529-2517

Conference

Conference	2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Country/Territory	United States
City	Honolulu, HI
Period	3/06/07 → 5/06/07

Keywords

Broadband
Low noise amplifiers
Multi-band
Multimode

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10.1109/RFIC.2007.380831

Cite this

Vidojkovic, M., Sanduleanu, M., Van Der Tang, J., Baltus, P., & Van Roermund, A. (2007). A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP. In Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 (pp. 53-56). Article 4266379 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). https://doi.org/10.1109/RFIC.2007.380831

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title = "A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP",

abstract = "This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.",

keywords = "Broadband, Low noise amplifiers, Multi-band, Multimode",

author = "Maja Vidojkovic and Mihai Sanduleanu and {Van Der Tang}, Johan and Peter Baltus and {Van Roermund}, Arthur",

year = "2007",

doi = "10.1109/RFIC.2007.380831",

language = "British English",

isbn = "1424405319",

series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",

pages = "53--56",

booktitle = "Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007",

note = "2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 ; Conference date: 03-06-2007 Through 05-06-2007",

}

Vidojkovic, M, Sanduleanu, M, Van Der Tang, J, Baltus, P & Van Roermund, A 2007, A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP. in Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007., 4266379, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 53-56, 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007, Honolulu, HI, United States, 3/06/07. https://doi.org/10.1109/RFIC.2007.380831

A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP. / Vidojkovic, Maja; Sanduleanu, Mihai; Van Der Tang, Johan et al.
Proceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007. 2007. p. 53-56 4266379 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

AB - This paper presents a novel broadband, induetorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1GHz. The measured power gain of the LNA is 16dB at 1GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300MHz up to 1GHz. The current consumption is 14mA from a 1.2V supply. The circuit is designed in a baseline CMOS 90nm Low Power (LP) process.

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A 1.2 V, inductorless, broadband LNA in 90 nm CMOS LP

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