TY - JOUR
T1 - 17 GHz RF front-ends for low-power wireless sensor networks
AU - Wu, Wanghua
AU - Sanduleanu, Mihai A.T.
AU - Li, Xia
AU - Long, John R.
N1 - Funding Information:
Manuscript received December 23, 2007; revised April 18, 2008. Current version published September 10, 2008. This work was supported by Philips Research. W. Wu, X. Li, and J. R. Long are with the Electronics Research Laboratory/DIMES, Delft University of Technology, The Netherlands (e-mail: [email protected]). M. A. T. Sanduleanu is with Philips Research Laboratories, Eindhoven, The Netherlands. Digital Object Identifier 10.1109/JSSC.2008.2002336
PY - 2008/9
Y1 - 2008/9
N2 - A 17 GHz low-power radio transceiver front-end implemented in a 0.25 μm SiGe:C BiCMOS technology is described. Operating at data rates up to 10 Mbit/s with a reduced transceiver turn-on time of 2 μs, gives an overall energy consumption of 1.75 nJ/bit for the receiver and 1.6 nJ/bit for the transmitter. The measured conversion gain of the receiver chain is 25-30 dB into a 50 Ω load at 10 MHz IF, and noise figure is 12±0.5 dB across the band from 10 to 200 MHz. The 1-dB compression point at the receiver input is -37 dBm and IIP3 is -25 dBm. The maximum saturated output power from the on-chip transmit amplifier is - 1.4 dBm. Power consumption is 17.5 mW in receiver mode, and 16 mW in transmit mode, both operating from a 2.5 V supply. In standby, the transceiver supply current is less than 1 μA.
AB - A 17 GHz low-power radio transceiver front-end implemented in a 0.25 μm SiGe:C BiCMOS technology is described. Operating at data rates up to 10 Mbit/s with a reduced transceiver turn-on time of 2 μs, gives an overall energy consumption of 1.75 nJ/bit for the receiver and 1.6 nJ/bit for the transmitter. The measured conversion gain of the receiver chain is 25-30 dB into a 50 Ω load at 10 MHz IF, and noise figure is 12±0.5 dB across the band from 10 to 200 MHz. The 1-dB compression point at the receiver input is -37 dBm and IIP3 is -25 dBm. The maximum saturated output power from the on-chip transmit amplifier is - 1.4 dBm. Power consumption is 17.5 mW in receiver mode, and 16 mW in transmit mode, both operating from a 2.5 V supply. In standby, the transceiver supply current is less than 1 μA.
KW - BAW resonator
KW - Energy efficiency
KW - Energy/bit
KW - Low-power radio
KW - Radio transceiver front-end
KW - SiGe BiCMOS technology
KW - Wireless sensor networks
UR - http://www.scopus.com/inward/record.url?scp=52249103759&partnerID=8YFLogxK
U2 - 10.1109/JSSC.2008.2002336
DO - 10.1109/JSSC.2008.2002336
M3 - Article
AN - SCOPUS:52249103759
SN - 0018-9200
VL - 43
SP - 1909
EP - 1919
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 9
M1 - 4625990
ER -
