∼12% Efficiency improvement in a-Si thin-film solar cells using ALD grown 2-nm-thick ZnO nanoislands

Farsad Imtiaz Chowdhury, Nazek El-Atab, Aaesha Alnuaimi, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

2-nm-thick ZnO nanoislands have been grown using Atomic Layer Deposition (ALD) on the surface of n-i-p a-Si:H solar cells. With the nanoislands, an average improvement of 10.6% in short circuit current density (Jsc) and 12.05% in efficiency compared to the reference cell are achieved. Improved spectral response is obtained from ZnO nanoislands coated cell with an improvement of 4.2% and 5.25% in peak EQE and IQE respectively. The coated cell also minimizes reflection between 340-520 nm indicating light scattering ability of these nanoislands. Further analysis suggests that overall enhancement can be attributed to photon energy downshifting with a reduction in reflectivity.

Original languageBritish English
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2473-2477
Number of pages5
ISBN (Electronic)9781509056057
DOIs
StatePublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 25 Jun 201730 Jun 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States
CityWashington
Period25/06/1730/06/17

Keywords

  • Down shifting
  • Light scattering
  • Solar cells
  • ZnO nanoislands

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